张佳林（1995.08-），博士，讲师，硕士生导师

教育和工作经历：

2023.10-至今， 永利集团 77779193永利 讲师（硕导）

2019.9-2023.7，郑州大学 粒子物理与原子核物理 博士

2017.9-2019.6，郑州大学 凝聚态物理 硕士

2013.9-2017.6，上海电力学院 应用物理学 学士

研究方向：

电子器件（辐射）可靠性、

电子器件物理仿真、

半导体缺陷表征调控、

半导体缺陷第一性原理计算

科研项目：

1. 永利集团科研启动基金项目，InP基HEMTs重离子辐照损伤机制及模型研究，2023.10-2028.10（主持）

2. 海南省高等学校科学研究项目（自然科学类），毫米波InP HBTs器件粒子辐照的物理仿真模型研究，2024.1-2026.12（主持）

代表性论文：

1. J. Zhang, B. Mei, Y. Su, F. Yang, Z. Jin, and Y. Zhong*, "Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study," IEEE Transactions on Electron Devices, vol. 70, no. 8, pp. 4225-4230, 2023.

2. J.-L. Zhang, P. Ding, B. Mei, S.-H. Meng, C. Zhang, L.-H. Ma, Z. Jin, Y. Sun, H.-M. Zhang, and Y.-H. Zhong*, "The effects and mechanisms of 2 MeV proton irradiation on InP-based high electron mobility transistors," Applied Physics Letters, vol. 120, no. 10, p. 103501, 2022.

3. J. Zhang, P. Ding, Y. Jin, S. Meng, X. Zhao, Y. Hu, Y. Zhong* and Z. Jin, "A comparative study on radiation reliability of composite channel InP high electron mobility transistors," Chinese Physics B, vol. 30, no. 7, p. 070702, 2021.

4. YuXin Fang#, Jialin Zhang#, Yongbo Su#, Zhi Jin, Yinghui Zhong, “Intrinsic point defects investigation in InAlAs with extrapolated defect transition level,” Microelectronics Journal, vol. 147, p. 106168, 2024.

5. B. Yang#, J. Zhang#, P. Ding, S. Sun, Y. Jin, X. Zhao, S. Meng, Y. Hu, Y. Zhong* and Z. Jin, "PKA distributions in InAlAs and InGaAs materials irradiated by protons with different energies," Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 484, pp. 42-47, 2020.